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MCM6341ZP12 Datasheet(PDF) 3 Page - Motorola, Inc |
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MCM6341ZP12 Datasheet(HTML) 3 Page - Motorola, Inc |
3 / 10 page MCM6341 3 MOTOROLA FAST SRAM TRUTH TABLE (X = Don’t Care) E1 E2 E3 G W Mode I/O Pin Cycle Current H X X X X Not Selected High–Z — ISB1, ISB2 X L X X X Not Selected High–Z — ISB1, ISB2 X X H X X Not Selected High–Z — ISB1, ISB2 L H L H H Output Disabled High–Z — IDDA L H L L H Read Dout Read IDDA L H L X L Write High–Z Write IDDA ABSOLUTE MAXIMUM RATINGS (See Note) Rating Symbol Value Unit Power Supply Voltage Relative to VSS VDD – 0.5 to + 5.0 V Voltage Relative to VSS for Any Pin Except VDD Vin, Vout – 0.5 to VDD + 0.5 V Output Current (per I/O) Iout ± 20 mA Power Dissipation PD 1.0 W Temperature Under Bias Commercial Industrial Tbias – 10 to + 85 – 45 to + 90 °C Storage Temperature — Plastic Tstg – 55 to + 150 °C NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to RECOMMENDED OPER- ATING CONDITIONS. Exposure to higher than recommended voltages for extended periods of time could affect device reliability. This device contains circuitry to protect the inputs against damage due to high static volt- ages or electric fields; however, it is advised that normal precautions be taken to avoid ap- plication of any voltage higher than maximum rated voltages to these high–impedance circuits. This CMOS memory circuit has been designed to meet the dc and ac specifications shown in the tables, after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse air flow of at least 500 linear feet per minute is maintained. |
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