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IL223AT Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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IL223AT Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 3 page Semiconductor Group 4–10 IL221AT/IL222AT/IL223AT PHOTODARLINGTON SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER Package Dimensions in Inches (mm) FEATURES • High Current Transfer Ratio, I F=1 mA, IL221AT, 100% Minimum IL222AT, 200% Minimum IL223AT, 500% Minimum • Withstand Test Voltage, 2500 VAC RMS • Electrical Specifications Similar to Standard 6 Pin Coupler • Industry Standard SOIC-8 Surface Mountable Package • Standard Lead Spacing, .05" • Available in Tape and Reel (suffix T) (Conforms to EIA Standard RS481A) • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering • Underwriters Lab File #E52744 (Code Letter P) DESCRIPTION The IL221AT/IL222AT/IL223AT is a high current transfer ratio (CTR) optocoupler with a Gallium Arsenide infrared LED emitter and a silicon NPN photodarlington transistor detector. This device has a CTR tested at an 1 mA LED current. This low drive current permits easy interfac- ing from CMOS to LSTTL or TTL. This optocoupler is constructed in a standard SOIC- 8 foot print which makes it ideally suited for high density applications. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. Maximum Ratings Emitter Peak Reverse Voltage ............................................ 6.0 V Continuous Forward Current ............................... 60 mA Power Dissipation at 25 °C .................................. 90 mW Derate Linearly from 25 °C ............................ 1.2 mW/°C Detector Collector-Emitter Breakdown Voltage ..................... 30 V Emitter-Collector Breakdown Voltage ....................... 5 V Collector-Base Breakdown Voltage ........................ 70 V Power Dissipation ............................................. 150 mW Derate Linearly from 25 °C ........................... 2.0 mW/°C Package Total Package Dissipation at 25 °C Ambient (LED + Detector) ........................................... 240 mW Derate Linearly from 25 °C ........................... 3.3 mW/°C Storage Temperature ......................... –55 °C to +150°C Operating Temperature ..................... –55 °C to +100°C Soldering Time at 260 °C .................................... 10 sec. TOLERANCE: ±.005 (unless otherwise noted) Characteristics (TA=25°C) Symbol Min. Typ. Max. Unit Condition Emitter Forward Voltage VF 1.0 1.5 V IF=1mA Reverse Current IR 0.1 100 µAV R=6.0 V Capacitance CO 25 pF VF=0 V, F=1 MHz Detector Breakdown Voltage Collector-Emitter BVCEO 30 V IC=100 µA Emitter-Collector BVECO 5V IE=100 µA Collector-Base Voltage BVCBO 70 IC=10 µA Collector-Emitter Capacitance CCE 3.4 pF VCE=10 V Package DC Current Transfer IF=1 mA, Ratio CTRDC VCE=5 V IL221AT 100 IL222AT 200 IL223AT 500 Collector-Emitter ICE=0.5 mA, Saturation Voltage VCE sat 1V IF=1 mA Isolation Test Voltage VIO 2500 VACRMS t=1 sec. Capacitance, Input to Output CIO 0.5 pF Resistance, Input to Output RIO 100 G Ω Specifications subject to change. 1 2 3 4 Anode Cathode NC NC 8 7 6 5 NC Base Collector Emitter 40 ° .240 (6.10) .154 ±.005 (3.91 ±.13) .050 (1.27) typ. .016 (.41) .192 ±.005 (4.88 ±.13) .004 (.10) .008 (.20) Lead Coplanarity ±.0015 (.04) max. .015 ±.002 (.38 ±.05) .008 (.20) 7 ° .058 ±.005 (1.49 ±.13) .125 ±.005 (3.18 ±.13) Pin One ID .120 ±.005 (3.05 ±.13) CL .040 (1.02) 5 ° max. R.010 (.25) max. .020 ±.004 (.15 ±.10) 2 plcs. 10.95 |
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