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1N50ZL-T92-B Datasheet(PDF) 2 Page - Unisonic Technologies |
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1N50ZL-T92-B Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 6 page 1N50Z Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-726.b ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous (TC=25°C) ID 1.3 (Note 2) A Pulsed (Note 3) IDM 5 (Note 2) A Avalanche Current (Note 3) IAR 1.3 A Avalanche Energy Single Pulsed (Note 4) EAS 113 mJ Repetitive (Note 5) EAR 2.6 mJ Power Dissipation PD 40 W Derate above 25°C 0.32 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Drain current limited by maximum junction temperature 3. Repetitive Rating: Pulse width limited by maximum junction temperature 4. L = 120mH, IAS = 1.3A, VDD = 50V, RG = 27Ω, Starting TJ = 25°C 5. ISD ≤ 1.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 3.13 °C/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 500 V Drain-Source Leakage Current IDSS VDS=500V, VGS=0V 1 µA Gate- Source Leakage Current Forward IGSS VGS=+20V, VDS=0V +5 µA Reverse VGS=-20V, VDS=0V -5 µA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=0.65A 4.6 6.0 Ω DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz 220 290 pF Output Capacitance COSS 30 35 pF Reverse Transfer Capacitance CRSS 11 13 pF |
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