1N60Z

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-724.C

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±20

V

Avalanche Current (Note 2)

1.2

A

Continuous Drain Current

1.2

A

Pulsed Drain Current (Note 2)

4.8

A

Avalanche Energy

Single Pulsed (Note 3)

50

mJ

Repetitive (Note 2)

4.0

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-92

1

W

TO-252

1.5

Junction Temperature

+150

℃

Operating Temperature

-55 ~ +150

℃

Storage Temperature

-55 ~ +150

℃

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-92

140

℃

/W

TO-252

100

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

600

V

Drain-Source Leakage Current

10

μA

Gate-Source Leakage Current

Forward

+5

μA

Reverse

-5

μA

0.4

V/℃

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

9.3

11.5

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

120

150

pF

Output Capacitance

20

25

pF

Reverse Transfer Capacitance

3.0

4.0

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

(Note 2,3)

5

20

ns

Turn-On Rise Time

25

60

ns

Turn-Off Delay Time

7

25

ns

Turn-Off Fall Time

25

60

ns

Total Gate Charge

5.0

6.0

nC

Gate-Source Charge

1.0

nC

Gate-Drain Charge

2.6

nC