2N7002ZT

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-538.C

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

60

V

Gate-Source Voltage

±20

V

Drain Current

Continuous

300

mA

Pulse(Note 2)

800

Power Dissipation

200

mW

1.6

mW/°C

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

60

V

Drain-Source Leakage Current

1.0

µA

Gate-Source Leakage Current

±10

µA

ON CHARACTERISTICS

Gate Threshold Voltage

1.0

1.85

2.5

V

Static Drain-Source On-Resistance (Note)

13.5

Ω

7.5

DYNAMIC PARAMETERS

Input Capacitance

25

50

pF

Output Capacitance

10

25

pF

Reverse Transfer Capacitance

3.0

5.0

pF

SWITCHING PARAMETERS

Turn-ON Delay Time

12

20

ns

Turn-OFF Delay Time

20

30

ns

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

0.88

1.5

V

Maximum Pulsed Drain-Source Diode

Forward Current

0.8

A

Maximum Continuous Drain-Source Diode

Forward Current

Is

300

mA

Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.

2. Pulse width≦300μs, Duty cycle≦1%