2SC5353B

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R203-035.C

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

900

V

Collector-Emitter Voltage

750

V

Emitter-Base Voltage

7

V

DC

3

A

Collector Current

Pulse

5

A

Base Current

1

A

TO-220F/TO-126/TO-126C

20

W

TO-220

25

W

Power Dissipation

TO-251/TO-252

22

W

Junction Temperature

+150

°C

Storage Temperature

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Breakdown Voltage

900

V

Collector-Emitter Breakdown Voltage

750

V

Collector Cut-off Current

100

µA

Emitter Cut-off Current

10

µA

10

DC Current Gain

15

Collector-Emitter Saturation Voltage

1.0

V

Base-Emitter Saturation Voltage

1.3

V

Rise Time

0.7

µS

Storage Time

4.0

µS

Switching Time

Fall Time

0.5

µS