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ILH200 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part # ILH200
Description  HERMETIC PHOTOTRANSISTOR DUAL CHANNEL OPTOCOUPLER
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

ILH200 Datasheet(HTML) 1 Page - Siemens Semiconductor Group

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5–1
FEATURES
• Operating Temperature Range, –55
°C to +125°C
• Current Transfer Ratio Guaranteed from
–55
°C to +100°C Ambient Temperature Range
• High Current Transfer Ratio at Low Input Current
• Isolation Test Voltage, 3000 VDC
• Two Isolated Channels per Package
• Standard 8 Pin DIP Package
DESCRIPTION
The ILH200 is designed especially for hi-rel applica-
tions requiring optical isolation with high current trans-
fer ratio and low saturation VCE. Each channel of the
optocoupler consists of a light emitting diode and a
NPN silicon phototransistor mounted and coupled in
an 8 pin hermetically sealed DIP package. The low
input current makes the ILH200 well suited for direct
CMOS to LSTTL/TTL interfaces.
Maximum Ratings
Emitter (per channel)
Reverse Voltage ................................................................................6.0 V
Forward Current ..............................................................................60 mA
Peak Forward Current(1) ......................................................................1 A
Power Dissipation...........................................................................75 mW
Derate Linearly from 25
°C......................................................0.75 mW/°C
Detector (per channel)
Collector-Emitter Voltage ...................................................................70 V
Emitter-Collector Voltage .....................................................................7 V
Continuous Collector Current ..........................................................50 mA
Power Dissipation.........................................................................100 mW
Derate Linearly from 25
°C........................................................1.0 mW/°C
Package
Input to Output Isolation Test Voltage(2 ) ...................................3000 VDC
Storage Temperature Range ..........................................–65
°C to +150°C
Operating Temperature Range.......................................–55
°C to +125°C
Junction Temperature...................................................................... 150
°C
Soldering Time at 240
°C, 1.6 mm from case ................................ 10 sec.
Power Dissipation.........................................................................350 mW
Derate Linearly from 25
°C........................................................3.5 mW/°C
Notes:
1. Values applies for PW≤1 ms, PRR≤300 pps.
2. Measured between pins 1,2,3 and 4 shorted together and pins 5,6,7 and 8
shorted together. TA=25°C and duration=1 second, RH=45%.
Dimensions in inches (mm)
.390
±.005
1
2
3
4
8
7
6
5
Siemens
XXX XXXX
XXYY
.320
(8.13)
max.
.125
(3.18)
min.
.018
±.002
(.46
±.05)
.100
±.010
(2.54
±.25)
.020
(.51)
min.
.150
(3.81)
max.
.010
±.002
(.25
±.05)
.300
(7.62)
typ.
(9.91
±.13)
Anode
Cathode
Emitter
Collector
8
7
4
3
Cathode
Anode
2
1
Collector
Emitter
6
5
ILH200
HERMETIC PHOTOTRANSISTOR
DUAL CHANNEL OPTOCOUPLER


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