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5N80 Datasheet(PDF) 3 Page - Unisonic Technologies |
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5N80 Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 5 page  5N80 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 5 www.unisonic.com.tw QW-R502-483.d ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 800 V Drain-Source Leakage Current IDSS VDS=800V, VGS=-0V 25 µA Forward VGS=+30V +100 nA Gate- Source Leakage Current Reverse IGSS VGS=-30V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 3 5 V VGS=10V, ID=2.5A 2.0 2.5 Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2.5A, TC=100°C 4 Ω On State Drain Current ID(ON) VDS>ID(ON)×RDS(ON)max,VGS=10V 5 A DYNAMIC PARAMETERS Input Capacitance CISS 1190 1450 pF Output Capacitance COSS 165 200 pF Reverse Transfer Capacitance CRSS VGS=0V, VDS=25V, f=1.0MHz 70 85 pF SWITCHING PARAMETERS Total Gate Charge QG 75 95 nC Gate to Source Charge QGS 9 nC Gate to Drain Charge QGD VGS=10V, VDD=500V, ID=6A (Note 1, 2) 33 nC Turn-ON Delay Time tD(ON) 50 65 ns Rise Time tR VDD=400V, ID=2.5A, RG=50Ω VGS=10V (Note 1, 2) 85 105 ns Turn-OFF Delay Time tD(OFF) 120 150 ns Fall-Time tF VDD=640V, ID=5.5A, RG=50Ω VGS=10V (Note 1, 2) 30 40 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD ISD=5.5A, VGS=0V 2 V Reverse Recovery Time trr 700 ns Reverse Recovery Charge QRR 7.7 nC Reverse Recovery Current IRRM ISD=5.5A,dI/dt=100A/µs, VDD=80V,TJ=150°C (Note 1) 22 A Source-Drain Current ISD 5.5 A Source-Drain Current (Pulsed) (Note 1) ISDM 20 A Notes: 1. Pulsed: Pulse duration=300µs, duty cycle 1.5%. 2. Essentially independent of operating temperature |
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