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7N10 Datasheet(PDF) 3 Page - Unisonic Technologies |
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7N10 Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 6 page 7N10 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-394.F ELECTRICAL CHARACTERISTICS (Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=80V, ID=7.3A (Note 1,2) 5.8 7.5 nC Gate Source Charge QGS 1.4 nC Gate Drain Charge QGD 2.5 nC Turn-ON Delay Time tD(ON) VDD=50V, ID=7.3A, RG=25Ω (Note 1,2) 7 25 ns Turn-ON Rise Time tR 24 60 ns Turn-OFF Delay Time tD(OFF) 13 35 ns Turn-OFF Fall-Time tF 19 50 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS 7 A Maximum Pulsed Drain-Source Diode Forward Current ISM 16 A Drain-Source Diode Forward Voltage VSD IS =7A, VGS =0V 1.5 V Reverse Recovery Time trr VGS=0V, IS=7.3A, diF/dt=100A/µs 70 ns Reverse Recovery Charge QRR 150 nC Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
Similar Part No. - 7N10_12 |
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Similar Description - 7N10_12 |
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