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KOM2100B Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part # KOM2100B
Description  6fach-Silizium-PIN-Fotodiodenarray 6-Chip Silicon PIN Photodiode Array
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

KOM2100B Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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Semiconductor Group
470
KOM 2100 B
KOM 2100 BF
Grenzwerte
Maximum Ratings
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
T
A; Tstg
– 40 ... + 80
°C
Sperrspannung
Reverse voltage
V
R
20
V
Verlustleistung,
T
A = 25 °C
Total power dissipation
P
tot
150
mW
Kennwerte (
T
A = 25 °C, λ = 950 nm) für jede Einzeldiode
Characteristics (
T
A = 25 °C, λ = 950 nm) per single diode
Bezeichnung
Description
Sym-
bol
Wert
Value
Einheit
Unit
KOM 2100 B
KOM 2100 BF
Fotoempfindlichkeit
Spectral sensitivity
V
R = 5 V, Ee = 0.5 mW/cm
2
S
9 (
≥ 7)
8.5 (
≥ 6.6)
µA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
λ
S max
870
870
nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von S
max
Spectral range of sensitivity
S = 10% of S
max
λ
400 ... 1100
730 ... 1100
nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area
A
2.5
2.5
mm2
Abmessung der
bestrahlungsempfinlichen Fläche
Dimensions of radiant sensitive area
L
× B
L
× W
1
× 2.5
1
× 2.5
mm x mm
Abstand Chipoberfläche zu Vergu
βober-
fläche
Distance chip front to case seal
H
0.4 ... 0.6
0.4 ... 0.6
mm
Halbwinkel
Half angle
ϕ± 60
± 60
Grad
deg.
Dunkelstrom,
V
R = 10 V
Dark current
I
R
1 (
≤ 10)
1 (
≤ 10)
nA
Spektrale Fotoempfindlichkeit
Spectral sensitivity
Sλ
0.68
0.64
A/W


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