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K1109G-X-AE3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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K1109G-X-AE3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 4 page K1109 N-CHANNEL JFET UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R206-009.K ABSOLUTE MAXIMUM RATINGS (unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSX 20 V Gate-Drain Voltage VGDO -20 V Drain Current ID 10 mA Gate Current IG 10 mA Power Dissipation PD 80 mW Junction Temperature TJ +125 °C Storage Temperature TSTG -55 ~ +125 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Drain Current IDSS VDS=2.0V, VGS=0 40 600 μA Gate Off Voltage VGS(OFF) VDS=5.0V, ID=1.0μA -0.1 -1.0 V Forward Transfer Admittance lYFSl VDS=5.0V, VGS=0, f=1kHz 600 1600 μS Input Capacitance CISS VDS=5.0V, VGS=0, f=1.0MHz 7.0 8.0 pF Noise Voltage NV 1.8 3.0 V CLASSIFICATION OF IDSS RANK J32 J33 J34 J35 J36 J37 RANGE 40-70 60-110 90-180 150-300 200-450 300-600 |
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