MCM63P531

6

MOTOROLA FAST SRAM

WRITE TRUTH TABLE

Cycle Type

SGW

SW

SBa

SBb

SBc

SBd

Read

H

H

X

X

X

X

Read

H

L

H

H

H

H

Write Byte a

H

L

L

H

H

H

Write Byte b

H

L

H

L

H

H

Write Byte c

H

L

H

H

L

H

Write Byte d

H

L

H

H

H

L

Write All Bytes

H

L

L

L

L

L

Write All Bytes

L

X

X

X

X

X

Rating

Symbol

Value

Unit

Power Supply Voltage

VDD

– 0.5 to + 4.6

V

Voltage Relative to VSS for Any

Pin Except VDD

Vin, Vout

– 0.5 to VDD + 0.5

V

Output Current (per I/O)

Iout

± 20

mA

Package Power Dissipation (See Note 2)

PD

1.6

W

Temperature Under Bias

Tbias

– 10 to 85

°C

Storage Temperature

Tstg

– 55 to 125

°C

NOTES:

1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are

exceeded. Functional operation should be restricted to RECOMMENDED OPER-

ATING CONDITIONS. Exposure to higher than recommended voltages for extended

periods of time could affect device reliability.

2. Power dissipation capability is dependent upon package characteristics and use

environment. See Package Thermal Characteristics.

PACKAGE THERMAL CHARACTERISTICS

Rating

Symbol

Max

Unit

Notes

Thermal Resistance

—

—

—

1

Junction to Ambient (@ 200 lfm)

Single Layer Board

Four Layer Board

R

θJA

40

25

°C/W

2

Junction to Board (Bottom)

R

θJB

17

°C/W

3

Junction to Case (Top)

R

θJC

9

°C/W

4

NOTES:

1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient

temperature, air flow, board population, and board thermal resistance.

2. Per SEMI G38–87.

3. Indicates the average thermal resistance between the die and the printed circuit board.

4. Indicates the average thermal resistance between the die and the case top surface via the cold plate method (MIL SPEC–883 Method

1012.1).

This device contains circuitry to protect the

inputs against damage due to high static volt-

ages or electric fields; however, it is advised

that normal precautions be taken to avoid

application of any voltage higher than maxi-

mum rated voltages to this high–impedance

circuit.