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7N65ZG-TA3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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7N65ZG-TA3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 6 page  7N65Z Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-586.B ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 650 V Drain-Source Leakage Current IDSS VDS = 650V, VGS = 0V 1 μA Gate- Source Leakage Current Forward IGSS VGS = 30V, VDS = 0V 10 μA Reverse VGS = -30V, VDS = 0V -10 μA Breakdown Voltage Temperature Coefficient BV △ DSS/△TJ ID =250μA,Referenced to 25°C 0.67 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3.7A 0.94 1.2 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0 MHz 1400 pF Output Capacitance COSS 180 pF Reverse Transfer Capacitance CRSS 16 21 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD =325V, ID =7.4A, RG =25Ω (Note 1, 2) 70 ns Turn-On Rise Time tR 170 ns Turn-Off Delay Time tD(OFF) 140 ns Turn-Off Fall Time tF 130 ns Total Gate Charge QG VDS=520V, ID=7.4A, VGS=10 V (Note 1, 2) 29 38 nC Gate-Source Charge QGS 7 nC Gate-Drain Charge QGD 14.5 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 7.4 A Maximum Pulsed Drain-Source Diode Forward Current ISM 29.6 A Reverse Recovery Time trr VGS = 0V, IS = 7.4A, dIF / dt = 100A/μs (Note 1) 320 ns Reverse Recovery Charge QRR 2.4 μC Notes: 1. Pulse Test: Pulse width≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
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