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AP2111M-1.8TRG1 Datasheet(PDF) 10 Page - BCD Semiconductor Manufacturing Limited |
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AP2111M-1.8TRG1 Datasheet(HTML) 10 Page - BCD Semiconductor Manufacturing Limited |
10 / 20 page Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Jan. 2011 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 10 Electrical Characteristics (Continued) AP2111-4.8 Electrical Characteristic (Note 2) (Only for SOT-223) VIN=5.5V, CIN=1µF (Ceramic), COUT=1µF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C ranges, unless otherwise specified (Note 3). Note 2: To prevent the short circuit current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. Parameter Symbol Test Conditions Min Typ Max Unit Output Voltage VOUT VIN =5.5V, 1mA ≤ IOUT ≤ 30mA VOUT ×98.5% 4.8 VOUT ×101.5% V Maximum Output Current IOUT(Max) VIN=5.5V, VOUT=4.751V to 4.850V 600 mA Load Regulation (V △ OUT/VOUT) △ IOUT VIN=5.5V, 1mA ≤ IOUT ≤600mA 0.2 %/A Line Regulation (V △ OUT/VOUT) △ VIN 5.5V≤VIN≤6V, IOUT=30mA 0.02 %/V IOUT =10mA 5 8 IOUT =300mA 100 200 Dropout Voltage VDROP IOUT=600mA 200 400 mV Quiescent Current IQ VIN=5.5V, IOUT=0mA 55 80 µA Standby Current ISTD VIN=5.5V, VEN in OFF mode 0.01 1.0 µA f=100Hz 65 Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p VIN=5.5V, IOUT=100mA f=1kHz 65 dB Output Voltage Temperature Coefficient (V △ OUT/VOUT) T △ IOUT=30mA TA=-40°C to 85°C ±100 ppm/°C Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE No Load, 10Hz ≤ f ≤100kHz 50 µVRMS Thermal Shutdown Temperature TOTSD 160 Thermal Shutdown Hysteresis THYOTSD 30 Thermal Resistance (Junction to Case) θJC SOT-223 50.9 °C |
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