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AP2114D-2.5TRG1 Datasheet(PDF) 9 Page - BCD Semiconductor Manufacturing Limited |
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AP2114D-2.5TRG1 Datasheet(HTML) 9 Page - BCD Semiconductor Manufacturing Limited |
9 / 28 page Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Oct. 2010 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 9 Electrical Characteristics (Continued) AP2114-3.3 Electrical Characteristics (Note 2) (VIN=4.3V, CIN=4.7µF (Ceramic), COUT=4.7µF (Ceramic), Typical TA = 25°C, Bold typeface applies over -40OC≤TA≤85OC ranges, unless otherwise specified (Note 3)) Parameter Symbol Test Conditions Min Typ Max Unit Output Voltage VOUT VIN =4.3V, 1mA ≤ IOUT ≤ 30mA VOUT ×98.5% 3.3 VOUT ×101.5% V Maximum Output Current IOUT(MAX) VIN =4.3V, VOUT=3.25V to 3.35V 1.0 A Load Regulation △ VOUT/VOUT I △ OUT VIN=4.3V, 1mA ≤ IOUT ≤1A 0.2 1.0 %/A Line Regulation △ VOUT/VOUT V △ IN 4.3V≤VIN≤6V, IOUT=30mA 0.02 ±0.1 %/V Dropout Voltage VDROP IOUT=1A 450 750 mV Quiescent Current IQ VIN=4.3V, IOUT=0mA 65 90 µA f=100Hz 65 Power Supply Rejection Ratio PSRR Ripple 1Vp-p VIN=4.3V, IOUT=100mA f=1KHz 65 dB Output Voltage Temperature Coefficient △ VOUT/VOUT △ T IOUT=30mA ±30 ppm/°C Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE 10Hz ≤ f ≤100kHz (No load) 30 µVRMS VEN High Voltage VIH Enable logic high, regulator on 1.5 VEN Low Voltage VIL Enable logic low, regulator off 0.4 V Standby Current ISTD VIN=3.5V, VEN in OFF mode 0.01 1.0 µA Start-up Time TS No Load 20 µs EN Pull Down Resistor RPD 3.0 mΩ VOUT Discharge Resistor RDCHG Set EN pin at Low 60 Ω Thermal Shutdown Temperature TOTSD 160 Thermal Shutdown Hysteresis THYOTSD 25 °C SOIC-8 74.6 PSOP-8 43.7 SOT-223 50.9 TO-252-2 (1) / TO-252-2 (3) 35 Thermal Resistance (Junction to Case) θJC TO-263-3 22 °C /W Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. |
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