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AP2120N-3.3TRG1 Datasheet(PDF) 5 Page - BCD Semiconductor Manufacturing Limited |
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AP2120N-3.3TRG1 Datasheet(HTML) 5 Page - BCD Semiconductor Manufacturing Limited |
5 / 21 page Data Sheet 5 Nov. 2009 Rev. 1. 0 BCD Semiconductor Manufacturing Limited HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2120 Parameter Symbol Value Unit Input Voltage VIN 6.5 V Enable Input Voltage VCE -0.3 to VIN+0.3 V Output Current IOUT 300 mA Junction Temperature TJ 150 oC Storage Temperature Range TSTG -65 to 150 oC Lead Temperature (Soldering, 10sec) TLEAD 260 oC Thermal Resistance (Note 2) θJA 250 oC/W ESD (Human Body Model) ESD 2000 V ESD (Machine Model) ESD 200 V Absolute Maximum Ratings (Note 1) Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifica- tions do not apply when operating the device outside of its operating ratings. The maximum allowable power dissipation is a function of the maximum junction temperature, TJ(max), the junction-to-ambient thermal resistance, θJA, and the ambient tem- perature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using: PD(max)=(TJ(max) - TA)/θJA. Exceeding the maximum allowable power dissipation will result in excessive die temperature. Parameter Symbol Min Max Unit Input Voltage VIN 26 V Operating Junction Temperature Range TJ -40 85 oC Recommended Operating Conditions |
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