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AP2120N-3.3TRG1 Datasheet(PDF) 5 Page - BCD Semiconductor Manufacturing Limited

Part # AP2120N-3.3TRG1
Description  HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
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Manufacturer  BCDSEMI [BCD Semiconductor Manufacturing Limited]
Direct Link  http://www.bcdsemi.com
Logo BCDSEMI - BCD Semiconductor Manufacturing Limited

AP2120N-3.3TRG1 Datasheet(HTML) 5 Page - BCD Semiconductor Manufacturing Limited

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Data Sheet
5
Nov. 2009 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2120
Parameter
Symbol
Value
Unit
Input Voltage
VIN
6.5
V
Enable Input Voltage
VCE
-0.3 to VIN+0.3
V
Output Current
IOUT
300
mA
Junction Temperature
TJ
150
oC
Storage Temperature Range
TSTG
-65 to 150
oC
Lead Temperature (Soldering, 10sec)
TLEAD
260
oC
Thermal Resistance (Note 2)
θJA
250
oC/W
ESD (Human Body Model)
ESD
2000
V
ESD (Machine Model)
ESD
200
V
Absolute Maximum Ratings (Note 1)
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifica-
tions do not apply when operating the device outside of its operating ratings. The maximum allowable power dissipation is a
function of the maximum junction temperature, TJ(max), the junction-to-ambient thermal resistance, θJA, and the ambient tem-
perature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using: PD(max)=(TJ(max) -
TA)/θJA. Exceeding the maximum allowable power dissipation will result in excessive die temperature.
Parameter
Symbol
Min
Max
Unit
Input Voltage
VIN
26
V
Operating Junction Temperature Range
TJ
-40
85
oC
Recommended Operating Conditions


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