9N40

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-552.c

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

400

V

Drain-Source Leakage Current

1

µA

Gate- Source Leakage Current

Forward

+100 nA

Reverse

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

0.6 0.75

Ω

DYNAMIC PARAMETERS

Input Capacitance

1340

pF

Output Capacitance

160

pF

Reverse Transfer Capacitance

490

pF

SWITCHING PARAMETERS

Total Gate Charge

(Note 1, 2)

34

nC

Gate to Source Charge

18

nC

Gate to Drain Charge

16

nC

Turn-ON Delay Time

(Note 1, 2)

22

ns

Rise Time

60

ns

Turn-OFF Delay Time

32

ns

Fall-Time

140

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

9

A

Maximum Body-Diode Pulsed Current

36

A

Drain-Source Diode Forward Voltage

1.7

V

Body Diode Reverse Recovery Time

(Note 1)

350

ns

Body Diode Reverse Recovery Charge

2.6

µC

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature