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10N50G-TF1-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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10N50G-TF1-T Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 6 page 10N50 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-531.c ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 500 V Drain-Source Leakage Current IDSS VDS=500V, VGS=0V 10 µA Forward VGS=+30V, VDS=0V +100 nA Gate- Source Leakage Current Reverse IGSS VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=5A 0.54 0.68 Ω DYNAMIC PARAMETERS Input Capacitance CISS 1610 2096 pF Output Capacitance COSS 177 230 pF Reverse Transfer Capacitance CRSS VGS=0V, VDS=25V, f=1.0MHz 16 24 pF SWITCHING PARAMETERS Total Gate Charge QG 43 56 nC Gate to Source Charge QGS 7.5 nC Gate to Drain Charge QGD VGS=10V, VDS=400V, ID=10A (Note 1, 2) 18.5 nC Turn-ON Delay Time tD(ON) 29 67 ns Rise Time tR 80 170 ns Turn-OFF Delay Time tD(OFF) 141 290 ns Fall-Time tF VDD=250V, ID=10A, RG=25Ω (Note 1, 2) 80 165 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 10 A Maximum Body-Diode Pulsed Current ISM 40 A Drain-Source Diode Forward Voltage VSD IS=10A, VGS=0V 1.4 V Body Diode Reverse Recovery Time trr 50 ns Body Diode Reverse Recovery Charge QRR IS=10A, VGS=0V, dIF/dt=100A/µs (Note 1) 0.1 µC Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
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