MCM63P636TQ200R datasheet(10/27 Pages) MOTOROLA

Part #	MCM63P636TQ200R

Description	64K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM

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Manufacturer	MOTOROLA [Motorola, Inc]

Direct Link	http://www.freescale.com

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10 / 27 page

MCM63P636

10

MOTOROLA FAST SRAM

CAPACITANCE AND INDUCTANCE (See Notes 1, 2, and 3)

Pi D

i

TQFP

PBGA

Pi D

i

Capacitance (pF)

Inductance (nH)

Capacitance (pF)

Inductance (nH)

Pin Description

Min

Max

Min

Max

Min

Max

Min

Max

I/O Pins

5

7

2

10

5.5

7.5

2.5

4.5

Data Strobe Pins

5

7

2

10

5.5

7.5

2.5

4.5

Input Pins

3

5

2

10

3.5

5.5

2.5

4

ADS Pin

5

7

2

10

5.5

7.5

2.5

4.5

K and SK Pins

3.5

4.5

2

10

4

5

1.5

3

TCK Boundary Scan Pin

—

5

—

Boundary Scan Input Pins

—

8

—

TDO Boundary Scan Pin

—

8

—

NOTES:

1. Parameters are periodically sampled rather than 100% tested.

2. Capacitance variation part to part on the same pin is

± 0.25 pF.

3. Inductance variation part to part on the same pin is

± 1 nH.

AC OPERATING CONDITIONS AND CHARACTERISTICS

(VDD = 3.3 V ± 200 mV, Unless Otherwise Noted)

AC TEST CONDITIONS

Parameter

Value

Unit

Input Timing Reference Level

VDDQ/2

V

Input Pulse Levels

0 to 2.0

V

Input Rise/Fall Time (20 to 80%)

1

V/ns

Output Timing Reference Level

VDDQ/2

V

Die Temperature

TJ–250

TJ–225

TJ–200

115

°C

OUTPUT

RL

Figure 4. AC Output Test Load

Z0 = 50 Ω

1.0 V

Figure 5. Lumped Capacitive Load and Typical Derating Curve

(TBD)

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