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MMBT5088G-AE3-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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MMBT5088G-AE3-R Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 6 page  MMBT5088/MMBT5089 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,Ltd 3 of 6 www.unisonic.com.tw QW-R206-033,B TYPICAL CHARACTERISTICS Typical Pulsed Current Gain vs Collector Current 1200 1000 800 600 400 200 0 0.01 0.03 0.1 0.31310 30 100 Collector Current, IC (mA) VCE=5.0V Collector-Emitter Saturation Voltage vs. Collector Current 0.3 0.25 0.2 0.15 0.1 0.05 0.1 110 100 Collector Current, IC (mA) β=10 125 C C 25 C -40 C 25 C -40 125 C Collector-Cutoff Current vs Ambient Temperature 10 1 25 75 125 150 VCB=45V -0.1 50 100 Ambient Temperature, TA (℃) Input and Output Capacitance vs Reverse Bias Voltage 5 1 08 16 20 f=1.0MHz 0 412 4 3 2 Cte Cob Reverse Bias Voltage (V) |
Similar Part No. - MMBT5088G-AE3-R |
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Similar Description - MMBT5088G-AE3-R |
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