10N80

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

6 of 6

www.unisonic.com.tw

QW-R502-218.F

TYPICAL CHARACTERISTICS

200

0

0

2

Drain Current vs. Source to Drain Voltage

800

400

600

6

8

Drain-Source On-State

Resistance Characteristics

1000

4

10

1

0

0

0.5

Drain Current vs. Gate Threshold Voltage

2.5

1

1.5

2

3

Drain Current vs. Drain-Source

Breakdown Voltage

0

0

50

600

250

200

100

150

200

300

400

800

350

400

24

3

1000

1

0

0

1

4

23

3

4

5

2

5

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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

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