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12N50L-TA3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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12N50L-TA3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 6 page  12N50 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-528.c ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 500 V Drain-Source Leakage Current IDSS VDS=500V, VGS=0V 10 µA Gate- Source Leakage Current Forward IGSS VGS=+30V, VDS=0V +100 nA Reverse VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=6A 0.42 0.54 Ω DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz 1450 1930 pF Output Capacitance COSS 198 265 pF Reverse Transfer Capacitance CRSS 14.5 22 pF SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=400V, ID=12A (Note 1, 2) 30 39 nC Gate to Source Charge QGS 8 nC Gate to Drain Charge QGD 12 nC Turn-ON Delay Time tD(ON) VDD=250V, ID=12A, RG=25Ω (Note 1, 2) 28 65 ns Rise Time tR 54 120 ns Turn-OFF Delay Time tD(OFF) 75 160 ns Fall-Time tF 47 105 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 12 A Maximum Body-Diode Pulsed Current ISM 48 A Drain-Source Diode Forward Voltage VSD IS=12A, VGS=0V 1.5 V Body Diode Reverse Recovery Time trr IS=12A, VGS=0V, dIF/dt=100A/µs (Note 1) 154 ns Body Diode Reverse Recovery Charge QRR 0.45 µC Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
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