12N60G-TF1-T datasheet(3/7 Pages) UTC

Part #	12N60G-TF1-T

Description	12A, 600V N-CHANNEL POWER MOSFET

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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12N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

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www.unisonic.com.tw

QW-R502-170.I

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

VDD = 300V, ID = 12A,

RG = 25Ω (Note 1, 2)

30

70

ns

Turn-On Rise Time

tR

115

240

ns

Turn-Off Delay Time

tD(OFF)

95

200

ns

Turn-Off Fall Time

tF

85

180

ns

Total Gate Charge

QG

VDS= 480V,ID= 12A,

VGS= 10 V (Note 1, 2)

42

54

nC

Gate-Source Charge

QGS

8.6

nC

Gate-Drain Charge

QGD

21

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, IS = 12A

1.4

V

Maximum Continuous Drain-Source Diode

Forward Current

IS

12

A

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

48

A

Reverse Recovery Time

trr

VGS = 0 V, IS = 12A,

dIF/dt = 100 A/µs (Note 1)

380

ns

Reverse Recovery Charge

QRR

3.5

µC

Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature.

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12N60G-TF1-T Datasheet(PDF) 3 Page - Unisonic Technologies

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