Electronic Components Datasheet Search |
|
MMDT8050SL-AL6-R Datasheet(PDF) 1 Page - Unisonic Technologies |
|
MMDT8050SL-AL6-R Datasheet(HTML) 1 Page - Unisonic Technologies |
1 / 2 page UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR www.unisonic.com.tw 1 of 2 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R218-012.a LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE(sat) performance, and the transistor elements are independent, eliminating interference. FEATURES * Low VCE(sat), VCE(sat)=40mV (typ.)@IC / IB = 50mA / 2.5mA * Transistor elements are independent, eliminating interference. * Mounting cost and area can be cut in half. EQUIVALENT CIRCUIT Tr1 65 4 Tr2 12 3 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package Packing MMDT8050SL-AL6-R MMDT8050SG-AL6-R SOT-363 Tape Reel MMDT8050SL-AL6-R (1)Packing Type (2)Package Type (1) R: Tape Reel (2) AL6: SOT-363 (3) Halogen Free, L: Lead Free (3)Lead Free MARKING G: Halogen Free L: Lead Free N24 |
Similar Part No. - MMDT8050SL-AL6-R |
|
Similar Description - MMDT8050SL-AL6-R |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |