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BS62UV256SIP10 Datasheet(PDF) 5 Page - Brilliance Semiconductor

Part # BS62UV256SIP10
Description  Ultra Low Power CMOS SRAM 32K X 8 bit
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Manufacturer  BSI [Brilliance Semiconductor]
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BS62UV256SIP10 Datasheet(HTML) 5 Page - Brilliance Semiconductor

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BS62UV256
R0201-BS62UV256
Revision
2.7
Oct.
2008
5
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1
(1,2,4)
READ CYCLE 2
(1,3,4)
READ CYCLE 3
(1, 4)
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE = VIL.
3. Address valid prior to or coincident with CE transition low.
4. OE = VIL.
5. Transition is measured ± 500mV from steady state with CL = 5pF.
The parameter is guaranteed but not 100% tested.
tCLZ
(5)
DOUT
CE
tACS
tCHZ
(5)
tOH
tRC
tOE
DOUT
CE
OE
ADDRESS
tCLZ
(5)
tACS
tCHZ
(1,5)
tOHZ
(5)
tOLZ
tAA
tRC
tOH
tAA
DOUT
ADDRESS
tOH


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