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BS616UV1010ECG10 Datasheet(PDF) 7 Page - Brilliance Semiconductor |
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BS616UV1010ECG10 Datasheet(HTML) 7 Page - Brilliance Semiconductor |
7 / 11 page BS616UV1010 R0201-BS616UV1010 Revision 2.7 Oct. 2008 7 AC ELECTRICAL CHARACTERISTICS (TA = -40 OC to +85OC) WRITE CYCLE CYCLE TIME : 100ns JEDEC PARAMETER NAME PARANETER NAME DESCRIPTION MIN. TYP. MAX. UNITS tAVAX tWC Write Cycle Time 100 -- -- ns tAVWL tAS Address Set up Time 0 -- -- ns tAVWH tAW Address Valid to End of Write 100 -- -- ns tELWH tCW Chip Select to End of Write (CE) 100 -- -- ns tBLWH tBW Data Byte Control to End of Write (LB, UB) 100 -- -- ns tWLWH tWP Write Pulse Width 50 -- -- ns tWHAX tWR Write Recovery Time (CE, WE) 0 -- -- ns tWLQZ tWHZ Write to Output High Z -- -- 40 ns tDVWH tDW Data to Write Time Overlap 40 -- -- ns tWHDX tDH Data Hold from Write Time 0 -- -- ns tGHQZ tOHZ Output Disable to Output in High Z -- -- 40 ns tWHQX tOW End of Write to Output Active 10 -- -- ns SWITCHING WAVEFORMS (WRITE CYCLE) WRITE CYCLE 1 (1) tWC tWR1 (3) tCW (11) tWP (2) tAW tOHZ (4,10) tAS tWR2 (3) tDH tDW DIN DOUT WE LB, UB CE OE ADDRESS (5) tBW |
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