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BS616UV2019ACG85 Datasheet(PDF) 7 Page - Brilliance Semiconductor

Part # BS616UV2019ACG85
Description  Ultra Low Power CMOS SRAM 128K X 16 bit
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Manufacturer  BSI [Brilliance Semiconductor]
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BS616UV2019ACG85 Datasheet(HTML) 7 Page - Brilliance Semiconductor

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BS616UV2019
R0201-BS616UV2019
Revision
1.4
Oct.
2008
7
AC ELECTRICAL CHARACTERISTICS (TA = -40
OC to +85OC)
WRITE CYCLE
CYCLE TIME : 85ns
(VCC=1.9~3.6V)
CYCLE TIME : 100ns
(VCC=1.9~3.6V)
JEDEC
PARAMETER
NAME
PARANETER
NAME
DESCRIPTION
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
UNITS
tAVAX
tWC
Write Cycle Time
85
--
--
100
--
--
ns
tAVWL
tAS
Address Set up Time
0
--
--
0
--
--
ns
tAVWH
tAW
Address Valid to End of Write
85
--
--
100
--
--
ns
tELWH
tCW
Chip Select to End of Write
85
--
--
100
--
--
ns
tBLWH
tBW
Data Byte Control to End of Write
(LB, UB)
50
--
--
70
--
--
ns
tWLWH
tWP
Write Pulse Width
40
--
--
50
--
--
ns
tWHAX1
tWR1
Write Recovery Time
(CE, WE)
0
--
--
0
--
--
ns
tWHAX2
tWR2
Write Recovery Time
(CE2)
0
--
--
0
--
--
ns
tWLQZ
tWHZ
Write to Output High Z
--
--
35
--
--
40
ns
tDVWH
tDW
Data to Write Time Overlap
35
--
--
40
--
--
ns
tWHDX
tDH
Data Hold from Write Time
0
--
--
0
--
--
ns
tGHQZ
tOHZ
Output Disable to Output in High Z
--
--
35
--
--
40
ns
tWHQX
tOW
End of Write to Output Active
10
--
--
10
--
--
ns
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE 1
(1)
tWC
tWR1
(3)
tCW
(11)
tWP
(2)
tAW
tOHZ
(4,10)
tAS
tWR2
(3)
tDH
tDW
DIN
DOUT
WE
LB, UB
CE
OE
ADDRESS
(5)
tBW
tCW
(11)
CE2
(5,12)


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