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BS616LV8016DCG70 Datasheet(PDF) 1 Page - Brilliance Semiconductor |
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BS616LV8016DCG70 Datasheet(HTML) 1 Page - Brilliance Semiconductor |
1 / 10 page Very Low Power CMOS SRAM 512K X 16 bit BS616LV8016 R0201-BS616LV8016 Revision 2.4 Oct. 2008 1 Pb-Free and Green package materials are compliant to RoHS FEATURES Wide VCC operation voltage : 2.4V ~ 5.5V Very low power consumption : VCC = 3.0V Operation current : 31mA (Max.) at 55ns 2mA (Max.) at 1MHz Standby current : 4/8uA (Max.) at 70/85 OC VCC = 5.0V Operation current : 76mA (Max.) at 55ns 10mA (Max.) at 1MHz Standby current : 25/50uA (Max.) at 70/85 OC High speed access time : -55 55ns(Max.) at VCC=3.0~5.5V -70 70ns(Max.) at VCC=2.7~5.5V Automatic power down when chip is deselected Easy expansion with CE2, CE1 and OE options I/O Configuration x8/x16 selectable by LB and UB pin. Three state outputs and TTL compatible Fully static operation, no clock, no refresh Data retention supply voltage as low as 1.5V DESCRIPTION The BS616LV8016 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 by 16 bits and operates form a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with maximum CMOS standby current of 8/50uA at Vcc=3/5V at 85 OC and maximum access time of 55/70ns. Easy memory expansion is provided by an active LOW chip enable (CE1), active HIGH chip enable (CE2) and active LOW output enable (OE) and three-state output drivers. The BS616LV8016 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV8016 is available in DICE form and 48-ball BGA package. POWER CONSUMPTION POWER DISSIPATION STANDBY (ICCSB1, Max) Operating (ICC, Max) VCC=5.0V VCC=3.0V PRODUCT FAMILY OPERATING TEMPERATURE VCC=5.0V VCC=3.0V 1MHz 10MHz fMax. 1MHz 10MHz fMax. PKG TYPE BS616LV8016DC DICE BS616LV8016FC Commercial +0 OC to +70OC 25uA 4.0uA 9mA 39mA 75mA 1.5mA 19mA 30mA BGA-48-0912 BS616LV8016FI Industrial -40 OC to +85OC 50uA 8.0uA 10mA 40mA 76mA 2mA 20mA 31mA BGA-48-0912 PIN CONFIGURATIONS BLOCK DIAGRAM Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice. G H F E D C B A 1 2 3 4 5 6 A9 A11 A10 NC A12 A14 A13 A15 WE DQ13 DQ5 DQ7 DQ6 A17 A16 A7 VSS VCC DQ12 DQ11 DQ4 DQ3 VSS A5 OE A3 A0 A6 A4 A1 A2 CE2 UB DQ10 DQ1 CE1 DQ2 DQ0 48-ball BGA top view LB DQ8 DQ9 VSS VCC DQ14 DQ15 A18 NC A8 Address Input Buffer Row Decoder Memory Array 1024 x 8192 Column I/O Write Driver Sense Amp Column Decoder Address Input Buffer A16 A0 A1 A2 Data Input Buffer Control DQ0 . . . . . . DQ15 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 16 16 16 16 9 512 8192 1024 10 A14 Data Output Buffer A18 CE2 CE1 WE OE UB LB VCC VSS A3 . . . . . . A17 A15 |
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