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12N80L-TF1-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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12N80L-TF1-T Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 6 page  12N80 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-594.b ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 800 V Breakdown Voltage Temperature Coefficient BV △ DSS/T △ J ID=250µA, Referenced to 25°C 1.0 V/°C VDS=800V, VGS=0V 10 Drain-Source Leakage Current IDSS VDS=640V, TC=125°C 100 µA Forward VGS=+30V, VDS=0V 100 nA Gate- Source Leakage Current Reverse IGSS VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 3.0 5.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=6A 0.75 0.9 Ω DYNAMIC PARAMETERS Input Capacitance CISS 4200 pF Output Capacitance COSS 315 pF Reverse Transfer Capacitance CRSS VGS=0V, VDS=25V, f=1.0MHz 90 pF SWITCHING PARAMETERS Total Gate Charge QG 123 155 nC Gate to Source Charge QGS 27 45 nC Gate to Drain Charge QGD VGS=10V, VDS=640V, ID=12A (Note 1, 2) 49 80 nC Turn-ON Delay Time tD(ON) 18 50 ns Rise Time tR 12 50 ns Turn-OFF Delay Time tD(OFF) 51 100 ns Fall-Time tF VDD=400V, ID=12A, RG=25Ω (Note 1, 2) 18 50 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 12 A Maximum Body-Diode Pulsed Current ISM 48 A Drain-Source Diode Forward Voltage VSD IS=12A, VGS=0V 1.4 V Body Diode Reverse Recovery Time trr 1000 ns Body Diode Reverse Recovery Charge QRR VGS=0V, IS=12A, dIF/dt=100A/µs (Note 1) 17.0 µC Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
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