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BS616UV2019DCP85 Datasheet(PDF) 5 Page - Brilliance Semiconductor

Part # BS616UV2019DCP85
Description  Ultra Low Power CMOS SRAM 128K X 16 bit
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Manufacturer  BSI [Brilliance Semiconductor]
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Logo BSI - Brilliance Semiconductor

BS616UV2019DCP85 Datasheet(HTML) 5 Page - Brilliance Semiconductor

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BS616UV2019
R0201-BS616UV2019
Revision
1.4
Oct.
2008
5
AC ELECTRICAL CHARACTERISTICS (TA = -40
OC to +85OC)
READ CYCLE
CYCLE TIME : 85ns
(VCC=1.9~3.6V)
CYCLE TIME : 100ns
(VCC=1.9~3.6V)
JEDEC
PARAMETER
NAME
PARANETER
NAME
DESCRIPTION
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
UNITS
tAVAX
tRC
Read Cycle Time
85
--
--
100
--
--
ns
tAVQX
tAA
Address Access Time
--
--
85
--
--
100
ns
tELQV1
tACS1
Chip Select Access Time
(CE)
--
--
85
--
--
100
ns
tELQV2
tACS2
Chip Select Access Time
(CE2)
--
--
85
--
--
100
ns
tBLQV
tBA
Data Byte Control Access Time
(LB, UB)
--
--
85
--
--
100
ns
tGLQV
tOE
Output Enable to Output Valid
--
--
40
--
--
50
ns
tELQX1
tCLZ1
Chip Select to Output Low Z
(CE)
15
--
--
15
--
--
ns
tELQX2
tCLZ2
Chip Select to Output Low Z
(CE2)
15
--
--
15
--
--
ns
tBLQX
tBE
Data Byte Control to Output Low Z
(LB, UB)
15
--
--
15
--
--
ns
tGLQX
tOLZ
Output Enable to Output Low Z
15
--
--
15
--
--
ns
tEHQZ1
tCHZ1
Chip Select to Output High Z
(CE)
--
--
35
--
--
40
ns
tEHQZ2
tCHZ2
Chip Select to Output High Z
(CE2)
--
--
35
--
--
40
ns
tBHQZ
tBDO
Data Byte Control to Output High Z (LB, UB)
--
--
35
--
--
40
ns
tGHQZ
tOHZ
Output Enable to Output High Z
--
--
30
--
--
35
ns
tAVQX
tOH
Data Hold from Address Change
15
--
--
15
--
--
ns
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1
(1,2,4)
tRC
tOH
tAA
DOUT
ADDRESS
tOH


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