MPSA92/93

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R201-019.C

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

MPSA92

-300

V

MPSA93

-200

V

Collector-Emitter Voltage

MPSA92

-300

V

MPSA93

-200

V

Emitter-Base Voltage

-5

V

Collector Current

-500

mA

Collector Dissipation

SOT-89

1

W

TO-92

1.5

W

Junction Temperature

150

°С

Storage Temperature

-55~ +150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Collector-Base Breakdown

Voltage

MPSA92

-300

V

MPSA93

-200

V

Collector-Emitter Breakdown

Voltage

MPSA92

-300

V

MPSA93

-200

V

Emitter-Base Breakdown Voltage

-5

V

Collector Cut-Off Current

MPSA92

-0.25 µA

MPSA93

-0.25 µA

Emitter Cut-Off Current

-0.10 µA

ON CHARACTERISTICS

DC Current Gain(note)

60

80

80

Collector-Emitter Saturation Voltage

-0.5

V

Base-Emitter Saturation Voltage

-0.90

V

SMALL SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product

50

MHz

Output Capacitance

MPSA92

6

pF

MPSA93

8

pF