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18N50 Datasheet(PDF) 3 Page - Unisonic Technologies |
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18N50 Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 6 page  18N50 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-477.G ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 500 V Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C 0.5 V/°C Drain-Source Leakage Current IDSS VDS=500V, VGS=0V 1 µA VDS=400V, TC=125°C 10 µA Gate-Source Leakage Current Forward IGSS VGS = 30 V, VDS = 0 V 100 nA Reverse VGS = -30 V, VDS = 0 V -100 ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=9A 0.24 0.32 Ω Forward Transconductance gFS VDS=40V, ID=9A (Note 1) 25 S DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V,f=1.0MHz 2200 2860 pF Output Capacitance COSS 330 430 pF Reverse Transfer Capacitance CRSS 25 40 pF SWITCHING PARAMETERS Total Gate Charge QG VDS=400V, VGS=10V, ID=18A (Note 1,2) 45 60 nC Gate-Source Charge QGS 12.5 nC Gate-Drain Charge QGD 19 nC Turn-ON Delay Time tD(ON) VDD=250V, ID=18A, RG=25Ω (Note 1,2) 55 120 ns Turn-ON Rise Time tR 165 340 ns Turn-OFF Delay Time tD(OFF) 95 200 ns Turn-OFF Fall Time tF 90 190 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 18 A Maximum Body-Diode Pulsed Current ISM 72 A Drain-Source Diode Forward Voltage VSD IS =18A, VGS=0V 1.4 V Body Diode Reverse Recovery Time trr VGS=0V, IS=18A, dIF/dt=100A/μs (Note 1) 500 ns Body Diode Reverse Recovery Charge QRR 5.4 μC Note: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature |
Similar Part No. - 18N50_12 |
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Similar Description - 18N50_12 |
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