22N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-216.F

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Avalanche Current

22

A

Continuous Drain Current

22

A

Pulsed Drain Current (Note 1)

88

A

Avalanche Energy

Single Pulsed

380

mJ

Repetitive

37

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

18

V/ns

Power Dissipation

370

W

Junction Temperature

150

°C

Operating Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

40

°C /W

Junction to Case

0.34

°C /W