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30N06L-TN3-T Datasheet(PDF) 6 Page - Unisonic Technologies |
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30N06L-TN3-T Datasheet(HTML) 6 Page - Unisonic Technologies |
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6 / 8 page  30N06 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 6 of 8 www.unisonic.com.tw QW-R502-087.E TYPICAL CHARACTERISTICS 102 101 100 101 10-1 100 Drain-Source Voltage, VDS (V) On-State Characteristics 102 101 100 2 Gate-Source Voltage, VGS (V) Transfer Characteristics 46 8 10 35 7 9 VGS Top: 15V 10V 8V 7V 6V 5.5V 5V Bottorm: 4.5V 4.5V Note: 1. VDS=25V 2. 20µs Pulse Test 0.0 0 Drain Current, ID (A) 40 80 100 20 40 60 80 100 On-Resistance Variation vs. Drain Current and Gate Voltage 102 101 100 0.2 Source-Drain Voltage, VSD (V) Reverse Drain Current vs. Allowable Case Temperature 1.6 0.4 0.6 0.8 1.0 1.2 1.4 20 60 120 *Note: 1. VGS=0V 2. 250µs Test 25℃ 150℃ VGS=10V VGS=20V |
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