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30N06G-TN3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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30N06G-TN3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 8 page 30N06 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 8 www.unisonic.com.tw QW-R502-087.E ABSOLUTE MAXIMUM RATINGS(TC = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Continuous Drain Current TC = 25℃ ID 30 A TC = 100℃ 21.3 A Pulsed Drain Current (Note 2) IDM 120 A Avalanche Energy Single Pulsed (Note 3) EAS 300 mJ Repetitive (Note 2) EAR 8 mJ Power Dissipation TO-220 PD 79 W TO-220F/ TO-220F2 45 TO-252 44 Junction Temperature TJ +150 ℃ Operation Temperature TOPR -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repeativity rating: pulse width limited by junction temperature 3. L=0.66mH, IAS=30A, VDD=25V, RG=20Ω, Starting TJ=25℃ THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220 θJA 62 °C/W TO-220F/TO-220F2 62.5 TO-252 110 Junction to Case TO-220 θJC 1.9 °C/W TO-220F/TO-220F2 2.7 TO-252 2.85 |
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