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UF450 Datasheet(PDF) 3 Page - Unisonic Technologies |
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UF450 Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 6 page UF450 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-185.G ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0 V, ID=250µA 500 V Drain-Source Leakage Current IDSS VDS=500V,VGS=0 V 25 µA Gate-Source Leakage Current Forward IGSS VGS=20V 100 nA Reverse VGS=-20V -100 Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Reference to 25°C, ID=1.0mA 0.63 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=8.4A 0.31 0.4 Ω DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0MHz 2600 pF Output Capacitance COSS 720 pF Reverse Transfer Capacitance CRSS 340 pF SWITCHING PARAMETERS (Note 1) Total Gate Charge QG VDS=400V, VGS =10V, ID=14A (Note 1,2) 150 nC Gate Source Charge QGS 20 nC Gate Drain Charge QGD 80 nC Turn-ON Delay Time tD(ON) VDD=250V, ID=14A, RG=6.2Ω , RD=17Ω(Note 1,2) 17 ns Turn-ON Rise Time tR 47 ns Turn-OFF Delay Time tD(OFF) 92 ns Turn-OFF Fall-Time tF 44 ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=14A, VGS=0V 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 14 A Maximum Pulsed Drain-Source Diode Forward Current ISM 56 A Reverse Recovery Time trr IF=14A, dI/dt≤100A/μs, VDD≤50V (Note 1) 540 810 ns Reverse Recovery Charge QRR 4.8 7.2 µc Note: 1.Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2.Essentially independent of operating temperature |
Similar Part No. - UF450_11 |
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Similar Description - UF450_11 |
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