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UF460G-T47-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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UF460G-T47-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 4 page UF460 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R502-186.C ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Gate-Source Voltage VGSS ±20 V Continuous Drain Current Continuous (VGS=0V) ID 21 A Pulsed Drain Current Pulsed (Note 2) IDM 84 A Avalanche Current (Note2) IAR 21 A Repetitive(Note2) EAR 30 Avalanche Energy Single Pulsed(Note3) EAS 1200 mJ Power Dissipation (TC=25°С) PD 190 W Peak Diode Recovery dv/dt (Note4) dv/dt 3.5 V/ns Junction Temperature TJ +150 °С Strong Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. VDD=50V, Starting TJ=25°С, Peak IL=21A 4. ISD≤21A, di/dt≤160A/µs, VDD≤500V, TJ≤150°С, Suggested=2.35Ω THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 30 °С/W Junction to Case θjC 0.42 °С/W ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS =0 V, ID =250µA 500 V Drain-Source Leakage Current IDSS VDS=400V,VGS =0 V 25 µA Gate-Source Leakage Current IGSS VDS =0 V, VGS = ±20V ±100 nA Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Reference to 25°С, ID=1.0mA 0.78 V/°С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS =VGS, ID =250 µA 2.0 4.0 V VGS =10V, ID =14A 210 270 Static Drain-Source On Resistance (Note) RDS(ON) VGS =10V, ID =21A 310 mΩ DYNAMIC PARAMETERS Input Capacitance CISS 4300 Output Capacitance COSS 1000 Reverse Transfer Capacitance CRSS VDS =25V, VGS =0V, f=1.0MHz 250 pF SWITCHING PARAMETERS Total Gate Charge QG 84 190 Gate Source Charge QGS 12 27 Gate Drain Charge QGD VDS =250V, VGS =10V, ID =21A 60 135 nC Turn-ON Delay Time tD(ON) 35 Turn-ON Rise Time tR 120 Turn-OFF Delay Time tD(OFF) 130 Turn-OFF Fall-Time tF VDD=250V, ID =21A, RG =2.35Ω 98 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=21A,VGS=0V, TJ =25°С 1.8 V Maximum Continuous Drain-Source Diode Forward Current IS 21 Maximum Pulsed Drain-Source Diode Forward Current ISM 84 A Reverse Recovery Time tRR 580 ns Reverse Recovery Charge QRR IF=21 A, dI/dt=100A/µs, TJ =25°С,VDD≤50V(Note) 8.1 µC Note: Pulse Test: Pulse width ≤300μs, Duty cycle ≤2% |
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