UF460G-T47-T datasheet(2/4 Pages) UTC

Part #	UF460G-T47-T

Description	21A, 500V N-CHANNEL POWER MOSFET

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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2 / 4 page

UF460

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-186.C

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current

Continuous (VGS=0V)

ID

21

A

Pulsed Drain Current

Pulsed (Note 2)

IDM

84

A

Avalanche Current (Note2)

IAR

21

A

Repetitive(Note2)

EAR

30

Avalanche Energy

Single Pulsed(Note3)

EAS

1200

mJ

Power Dissipation (TC=25°С)

PD

190

W

Peak Diode Recovery dv/dt (Note4)

dv/dt

3.5

V/ns

Junction Temperature

TJ

+150

°С

Strong Temperature

TSTG

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by TJ(MAX)

3. VDD=50V, Starting TJ=25°С, Peak IL=21A

4. ISD≤21A, di/dt≤160A/µs, VDD≤500V, TJ≤150°С, Suggested=2.35Ω

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

30

°С/W

Junction to Case

θjC

0.42

°С/W

ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS =0 V, ID =250µA

500

V

Drain-Source Leakage Current

IDSS

VDS=400V,VGS =0 V

25

µA

Gate-Source Leakage Current

IGSS

VDS =0 V, VGS = ±20V

±100

nA

Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Reference to 25°С, ID=1.0mA

0.78

V/°С

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS =VGS, ID =250 µA

2.0

4.0

V

VGS =10V, ID =14A

210

270

Static Drain-Source On Resistance (Note)

RDS(ON)

VGS =10V, ID =21A

310

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

4300

Output Capacitance

COSS

1000

Reverse Transfer Capacitance

CRSS

VDS =25V, VGS =0V, f=1.0MHz

250

pF

SWITCHING PARAMETERS

Total Gate Charge

QG

84

190

Gate Source Charge

QGS

12

27

Gate Drain Charge

QGD

VDS =250V, VGS =10V,

ID =21A

60

135

nC

Turn-ON Delay Time

tD(ON)

35

Turn-ON Rise Time

tR

120

Turn-OFF Delay Time

tD(OFF)

130

Turn-OFF Fall-Time

tF

VDD=250V, ID =21A,

RG =2.35Ω

98

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

IS=21A,VGS=0V, TJ =25°С

1.8

V

Maximum Continuous Drain-Source Diode

Forward Current

IS

21

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

84

A

Reverse Recovery Time

tRR

580

ns

Reverse Recovery Charge

QRR

IF=21 A, dI/dt=100A/µs,

TJ =25°С,VDD≤50V(Note)

8.1

µC

Note: Pulse Test: Pulse width ≤300μs, Duty cycle ≤2%

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