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UF830L-TM3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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UF830L-TM3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 8 page UF830 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 8 www.unisonic.com.tw QW-R502-046,G ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless Otherwise Specified.) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage (TJ=25°C ~125°C) VDS 500 V Drain to Gate Voltage (RGS=20kΩ, TJ=25°C ~125°C) VDGR 500 V Gate to Source Voltage VGS ±30 V Drain Current Continuous ID 4.5 A Pulsed IDM 18 A Power Dissipation (TC = 25°C) TO-220/TO-262/TO-263 PD 73 W TO-220F/ TO-220F1 38 W TO-220F2 40 TO-251/TO-252 46 W Single Pulse Avalanche Energy Rating (Note 2) EAS 300 mJ Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. VDD=50V, starting TJ =25°C, L=25mH, RG=25Ω, peak IAS=4.5A THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-220/TO-262/TO-263 θJA 62.5 °C/W TO-220F/ TO-220F1 62.5 °C/W TO-220F2 62.5 TO-251/TO-252 100.3 °C/W Junction to Case TO-220/TO-262/TO-263 θJc 1.71 °C/W TO-220F/ TO-220F1 3.31 °C/W TO-220F2 3.125 TO-251/TO-252 2.7 °C/W ELECTRICAL SPECIFICATIONS (TA =25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Drain-Source Breakdown Voltage BVDSS ID=250μA, VGS=0V 500 V Gate Threshold Voltage VGS(TH) VGS=VDS, ID=250μA 2.0 4.0 V On-State Drain Current (Note 1) ID(ON) VDS>ID(ON)×RDS(ON)MAX, VGS=10V 4.5 A Drain-Source Leakage Current IDSS VDS= Rated BVDSS, VGS=0V 25 μA VDS=0.8×Rated BVDSS VGS=0V, TJ= 125°C 250 μA Gate-Source Leakage Current IGSS VGS=±30V ±100 nA Static Drain-Source On-State Resistance RDS(ON) ID=2.5A, VGS=10V (Note 2) 1.3 1.5 Ω Forward Transconductance (Note 1) gFS VDS≥10V, ID=2.7A 2.5 4.2 S Turn-On Delay Time tD(ON) VDD=250V, ID≈4.5A RGS=12Ω, RL =54Ω (Note 2) 10 17 ns Turn-On Rise Time tR 15 23 ns Turn-Off Delay Time tD(OFF) 33 53 ns Turn-Off Fall Time tF 16 23 ns Note: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%. 2. MOSFET Switching Times are Essentially Independent of Operating Temperature. 3. Gate Charge is Essentially Independent of Operating Temperature. |
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