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UF830L-TM3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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UF830L-TM3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 8 page UF830 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 8 www.unisonic.com.tw QW-R502-046,G ELECTRICAL SPECIFICATIONS(Cont.) (TA =25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Total Gate Charge QG VGS=10V, ID=4.5A VDS=0.8×Rated BVDSS IG(REF)=1.5mA (Note 3) 22 32 nC Gate-Source Charge QGS 3.5 nC Gate-Drain Charge QGD 11 nC Input Capacitance CISS VDS=25V, VGS=0V, f=1.0MHz 600 pF Output Capacitance COSS 100 pF Reverse Transfer Capacitance CRSS 20 pF Note: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%. 2. MOSFET Switching Times are Essentially Independent of Operating Temperature. 3. Gate Charge is Essentially Independent of Operating Temperature. INTERNAL PACKAGE INDUCTANCE PARAMETER SYMBOL MIN TYP MAX UNIT Internal Drain Inductance Measured from the contact screw on tab to center of die LD 3.5 nH Measured from the drain lead(6mm from package) to center of die 4.5 nH Internal Source Inductance Measured from the source lead(6mm from header) to source bond pad LS 7.5 nH Remark: Modified MOSFET symbol showing the internal devices inductances as below. SOURCE TO DRAIN DIODE SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Source to Drain Diode Voltage VSD TJ=25°C,ISD=4.5A, VGS=0V(Note 1) 1.6 V Continuous Source to Drain Current ISD Note 2 5.5 A Pulse Source to Drain Current ISDM 18 A Reverse Recovery Time trr TJ=25°C, ISD=4.5A, dI/dt=100A/μs 180 350 760 ns Reverse Recovery Charge QRR TJ=25°C, ISD=4.5A, dI/dt=100A/μs 0.96 2.2 4.3 μC NOTE : 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%. 2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below. G S D |
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