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UH10KG-AL6-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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UH10KG-AL6-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page UH10K NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R218-010.A ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL RATINGS UNIT Supply Voltage VCC 50 V Input Voltage VIN -5 ~ +12 V IOUT 100 mA Output Current IC(MAX.) 100 mA Power Dissipation PD 150 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta =25°C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT VI(OFF) VCC =5V, IOUT =100μA 0.5 V Input Voltage VI(ON) VOUT =0.3V, IOUT =5mA 1.1 V Output Voltage VO(ON) IOUT/IIN =5mA/0.25mA 0.1 0.3 V Input Current IIN VIN =5V 3.6 mA Output Current IO(OFF) VCC =50V, VIN =0V 0.5 µA DC Current Gain hFE VOUT =5V, IOUT =10mA 80 Transition Frequency fT VCE=10V, IE=-5mA, f=100MHz (Note) 250 MHz Input Resistance R1 1.4 2 2.6 kΩ Resistance Ratio R2/R1 18 23 28 Note: Transition frequency of the device |
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