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UP1496 Datasheet(PDF) 2 Page - Unisonic Technologies |
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UP1496 Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page UP1496 Preliminary PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R206-095.b ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -220 V Collector-Emitter Voltage VCEO -200 V Emitter-Base Voltage VEBO -5 V Collector Current IC -0.3 A Peak Pulse Current ICM -1 A Base Current IB -200 mA Collector Dissipation (Ta=25°С) PC 500 mW Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=-100 µA -220 V Collector-Emitter Breakdown Voltage BVCEO IC=-10 mA (Note) -200 V Emitter-Base Breakdown Voltage BVEBO IE =-100 µA -5 V Collector Cutoff Current ICBO VCB=-200 V -100 nA Emitter Cutoff Current IEBO VEB=-4 V -100 nA Collector -Emitter Cut-off Current ICES VCES=-200 V -100 nA VCE=-10V , IC=-1mA 100 VCE=-10V , IC=-100mA (Note) 100 VCE=-10V , IC=-250mA (Note) 85 300 DC Current Transfer Ratio hFE VCE=-10V , IC=-400mA (Note) 35 Base-Emitter Turn-On Voltage VBE(ON) VCE=-10V , IC =-250 mA (Note) -0.9 V IC=-100mA, IB=-10mA -0.2 V Collector-Emitter Saturation Voltage VCE(SAT) IC=-250mA, IB=-25mA (Note) -0.35 V Base-Emitter Saturation Voltage VBE(SAT) IC=-250mA, IB=-25mA (Note) -1.0 V Transition Frequency fT VCE =-10V , IC=-50mA, f=100MHz 150 MHz Output Capacitance COB VCB=-10V, f=1MHz 10 pF Note: Measured under pulse conditions. Pulse width=300µs. Duty cycle≤2%. |
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