UP9T15GL-TN3-R datasheet(2/5 Pages) UTC

Part #	UP9T15GL-TN3-R

Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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UP9T15G

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-208.A

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

±12

V

Continuous Drain Current , @ VGS= 4.5V

TC=25°C

ID

12.5

A

Pulsed Drain Current

IDM

60

A

Power Dissipation

TC=25°C

PD

12.5

W

Linear Derating Factor

0.1

W/℃

Junction Temperature

TJ

+150

℃

Strong Temperature

TSTG

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction-to-Ambient

θJA

110

℃

/W

Junction-to-Case

θJC

10

℃

/W

ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS =0 V, ID =250 µA

20

V

Drain-Source Leakage Current

IDSS

VDS =20 V, VGS =0 V

1

µA

Gate-Body Leakage Current

IGSS

VGS = ±12 V

±100

nA

Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ 25 , I

℃ D=1mA

0.02

V/℃

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS =VGS, ID =250 µA

0.5

1.5

V

VGS =4.5 V, ID =6 A

50

Static Drain-Source On-Resistance

RDS(ON)

VGS =2.5 V, ID =5.2 A

80

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

360

580

pF

Output Capacitance

COSS

70

pF

Reverse Transfer Capacitance

CRSS

VDS =20 V, VGS =0 V,

f=1.0MHz

50

pF

SWITCHING PARAMETERS

Total Gate Charge(Note2)

QG

5

8

nC

Gate Source Charge

QGS

1

nC

Gate Drain Charge

QGD

VDS =16 V, VGS =4.5 V, ID

=10 A

2

nC

Turn-ON Delay Time(Note2)

tD(ON)

8

ns

Turn-ON Rise Time

tR

55

ns

Turn-OFF Delay Time

tD(OFF)

10

ns

Turn-OFF Fall-Time

tF

VGS=5 V, VDS=10V,RD=1 Ω,

ID =10 A , RG =3.3 Ω

3

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Forward On Voltage(Note2)

VSD

IS=10 A,VGS=0V

1.3

V

Reverse Recovery Time(Note2)

tRR

17

ns

Reverse Recovery Charge

QRR

IS=10 A, VGS=0 V,dI/dt=100

A/μs

9

nC

Notes: 1.Pulse width limited by safe operating area.

2.Pulse width ≤ 300us , duty cycle ≤ 2%.

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