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DTA114EL-T92-B Datasheet(PDF) 2 Page - Unisonic Technologies |
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DTA114EL-T92-B Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page DTA114E PNP SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 3 www.unisonic.com.tw QW-R206-046,E ABSOLUATE MAXIUM RATINGS (TA = 25℃) Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA= 25℃, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Input Voltage VIN(OFF) VCC= -5V, IOUT= -100μA -0.5 V VIN(ON) VOUT= -0.3V, IOUT= -10mA -3 Output Voltage VOUT(ON) IOUT/IIN= -10mA/-0.5mA -0.3 V Input Current IIN VIN= -5V -0.88 mA Output Current IOUT(OFF) VCC= -50V , VIN=0V -0.5 µA DC Current Gain hFE VOUT= -5V, IOUT= -5mA 30 Input Resistance R1 7 10 13 kΩ Resistance Ratio R2/R1 0.8 1 1.2 Transition Frequency fT VCE= -10 V, IE=5mA, f=100MHz 250 MHz PARAMETER SYMBOL RATINGS UNIT Supply Voltage VCC -50 V Input Voltage VIN -40 ~ +10 V Output Current IOUT(MAX) -100 mA Power Dissipation SOT-523 PD 150 mW SOT-23/SOT-323 200 TO-92 625 TO-92SP 550 Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C |
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