USS4350G-AB3-R datasheet(2/3 Pages) UTC

Part #	USS4350G-AB3-R

Description	50V, 5A NPN LOW VCE(SAT) TRANSISTOR

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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USS4350

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R207-022.C

ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

6

V

DC

IC

3

A

Collector Current

Peak

ICM

5

A

Peak Base Current

IBM

1

A

SOT-89

1.4

Power Dissipation (TC=25°C) (Note 2)

SOT-223

PD

2

W

Junction Temperature

TJ

150

°C

Operating Temperature

TOPR

-65 ~ +150

°C

Storage Temperature

TSTG

-65 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm

2

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

SOT-89

90

Junction to Ambient (Note)

SOT-223

θJA

62.5

°C/W

Note: Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm

2

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector Cut-off Current

ICBO

VCB=50 V, IE =0

100

nA

Emitter Cut-off Current

IEBO

VEB=5 V, IC =0

100

nA

IC=500 mA, IB=50 mA

90

mV

IC=1 A, IB=50 mA

170

mV

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=2 A, IB=200 mA (Note)

290

mV

Base-Emitter Saturation Voltage

VBE(SAT)

IC=2 A, IB=200 mA (Note)

1.2

V

Base-Emitter Turn-On Voltage

VBE(ON)

VCE =2V; IC = 1 A (Note)

1.1

V

hFE1

VCE =2V, IC=500 mA

200

hFE2

VCE =2V, IC=1 A (Note)

200

DC Current Gain

hFE3

VCE =2V, IC=2 A (Note)

100

Equivalent On-Resistance

RCE(SAT)

IC=2 A, IB=200 mA (Note)

110

<145

mΩ

Transition Frequency

fT

IC=100 mA, VCE=5 V, f=100 MHz

100

MHz

Collector Capacitance

CC

VCB=10 V; IE =Ie = 0; f =1 MHz

30

pF

Note: Pulse test: tP ≤300 μs; Duty cycle≤2%

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