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UT20N03L-TN3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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UT20N03L-TN3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 4 page UT20N03 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R502-139.B ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 20 Pulsed Drain Current (Note 1) IDM 120 A Single Pulsed (Note 2) EAS 15 Avalanche Energy Repetitive (Note 1) EAR 6 mJ Peak Diode Recovery (Note 3) dv/dt 6 KV/µs Power Dissipation PD 60 W Junction Temperature TJ +175 ℃ Storage Temperature TSTG -55 ~ +175 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Junction-to-Ambient θJA 100 ℃ /W Junction-to-Case θJC 1.7 2.5 ℃ /W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS =0 V, ID =250µA 30 V Drain-Source Leakage Current IDSS VDS =30V,VGS =0V 1 µA Gate-Source Leakage Current IGSS VDS =0 V, VGS = ±20V ±100 nA ON CHARACTERISTICS Gate-Threshold Voltage VGS(TH) VDS =VGS, ID =25 µA 1.2 1.6 2 V VGS=4.5V, ID =15A 22.9 31 Drain-Source On-State Resistance RDS(ON) VGS=10V, ID =15A 15.5 20 mΩ DYNAMIC CHARACTERISTICS Input Capacitance CISS 530 700 Output Capacitance COSS 200 275 Reverse Transfer Capacitance CRSS VDS =25 V, VGS =0V, f=1MHz 60 90 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 6.2 9.3 Turn-On Rise Time tR 11 17 Turn-Off Delay Time tD(OFF) 23 24 Turn-Off Fall-Time tF VGS=10V,VDD=15V, RG=12.7Ω, ID=15A 18 27 ns Gate-Source Charge QGS 2.5 3.1 Gate-Drain Charge QGD VDD=15V,ID=15A 6.4 9.6 Gate Charge Total QG VDD=15V,ID=15A, VGS=0~5V 8.4 11 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS=0V,IF=30A 1.1 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 30 Maximum Pulsed Drain-Source Diode Forward Current ISM 120 A Reverse Recovery Time tRR 15 18 ns Reverse Recovery Charge QRR VR=15V,IF=IS, dIF/dt=100A/µs 2 3 nC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. ID = 15A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. IS=30A, VDS=24V, di/dt=200A/μs, TJ(MAX)=175℃ 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature |
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