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UT70N03L-TN3-T Datasheet(PDF) 1 Page - Unisonic Technologies |
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UT70N03L-TN3-T Datasheet(HTML) 1 Page - Unisonic Technologies |
1 / 3 page UNISONIC TECHNOLOGIES CO., LTD UT70N03 Preliminary Power MOSFET www.unisonic.com.tw 1 of 5 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-269.c N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT70N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)< 9mΩ @ VGS=10V, ID=33A * RDS(ON)< 18mΩ @ VGS=4.5V, ID=20A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL 1.Gate 3.Source 2.Drain ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 UT70N03L-TM3-T UT70N03G-TM3-T TO-251 G D S Tube UT70N03L-TN3-T UT70N03G-TN3-T TO-252 G D S Tube UT70N03L-TN3-R UT70N03G-TN3-R TO-252 G D S Tape Reel |
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