UT70N03

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-269.c

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous Drain Current

60

A

Pulsed Drain Current

195

A

Power Dissipation

53

W

Linear Derating Factor

0.36

W/°C

Junction Temperature

+150

℃

Storage Temperature

-55 ~ +150

℃

Note:Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

110

/W

℃

Junction to Case

2.8

/W

℃

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Drain-Source Leakage Current

1

µA

Gate-Source Leakage Current

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

1

3

V

Static Drain-Source On-Resistance

9

mΩ

18

Forward Transconductance

35

S

DYNAMIC PARAMETERS

Input Capacitance

f=1.0MHz

1485

pF

Output Capacitance

245

pF

Reverse Transfer Capacitance

170

pF

SWITCHING PARAMETERS

Total Gate Charge

16.5

nC

Gate Source Charge

5

nC

Gate Drain Charge

10.3

nC

Turn-ON Delay Time

8.2

ns

Turn-ON Rise Time

105

ns

Turn-OFF Delay Time

21.4

ns

Turn-OFF Fall-Time

8.5

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage (Note 2)

1.3

V

Maximum Body-Diode Continuous Current

60

A

Pulsed Source Current (Body Diode)

(Note 1)

195

A

Note :1. Pulse width limited by safe operating area.