UT2301

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-118.G

PARAMETER

SYMBOL

RATING

UNITS

Drain-Source Voltage

-20

V

Gate-Source Voltage

±8

V

Continuous Drain Current

-2.8

A

Pulsed Drain Current (Note 1, 2)

-10

A

Total Power Dissipation

1.14

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient (Note 3)

110

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNITS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-20

V

Drain-Source Leakage Current

-1

µA

Gate-Source Leakage Current

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-0.45

V

Static Drain-Source On-State Resistance

(Note 2)

95

130

mΩ

122

190

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

447

pF

Output Capacitance

127

pF

Reverse Transfer Capacitance

80

pF

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note 2)

5

25

ns

Turn-ON Rise Time

19

60

ns

Turn-OFF Delay Time

95

110

ns

Turn-OFF Fall Time

65

80

ns

Total Gate Charge (Note 2)

5.4

10

nC

Gate-Source Charge

0.8

nC

Gate-Drain Charge

1.1

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage (Note 2)

-0.8

-1.2

V

Maximum Continuous Drain-Source Diode

Forward Current

-1.6

A

2. Pulse width ≤300µs, duty cycle ≤2%.

3. Surface mounted on 1 in