CMT01N60

2010/12/01 Rev. 1.7

Champion Microelectronic Corporation

Page 1

GENERAL DESCRIPTION

FEATURES

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage-blocking capability

without degrading performance over time. In addition, this

advanced MOSFET is designed to withstand high energy in

avalanche and commutation modes. The new energy

efficient design also offers a drain-to-source diode with a

fast recovery time. Designed for high voltage, high speed

switching applications in power supplies, converters and

PWM motor controls, these devices are particularly well

suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer

additional and safety margin against unexpected voltage

transients.

Robust High Voltage Termination

Avalanche Energy Specified

Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

Diode is Characterized for Use in Bridge Circuits

PIN CONFIGURATION

SYMBOL

TO-251

Front View

1

23

TO-92

Front View

1

23

D

S

G

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain to Current － TO-251(Continuous)

TO-92 (Continuous)

－

Pulsed

1.0

0.5

2.0

A

Gate-to-Source Voltage － Continue

－

Non-repetitive

±30

±40

V

V

Total Power Dissipation

TO-251

TO-92

30

3

W

Operating and Storage Temperature Range

-55 to 150

℃

20

mJ

Thermal Resistance － Junction to Case

－

Junction to Ambient

1.0

62.5

℃

/W

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

260

℃