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CMT14N50GN220FP Datasheet(PDF) 2 Page - Champion Microelectronic Corp. |
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CMT14N50GN220FP Datasheet(HTML) 2 Page - Champion Microelectronic Corp. |
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2 / 8 page  CMT14N50 POWER FIELD EFFECT TRANSISTOR 2009/07/17 Rev1.2 Champion Microelectronic Corporation Page 2 ORDERING INFORMATION Part Number Package CMT14N50GN220FP* TO-220 Full Package *Note: G : Suffix for PB Free Product ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT14N50 Characteristic Symbol Min Typ Max Units Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 μA) V(BR)DSS 500 V Drain-Source Leakage Current (VDS = 500 V, VGS = 0 V) (VDS = 400 V, VGS = 0 V, TJ = 125℃) IDSS 1 3 μA Gate-Source Leakage Current-Forward (Vgsf = 30 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsr = -30 V, VDS = 0 V) IGSSR 100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 μA) VGS(th) 2.0 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 7A) * RDS(on) 0.34 Ω Drain-Source On-Voltage (VGS = 10 V) (ID = 7 A) VDS(on) 7.5 V Forward Transconductance (VDS = 50 V, ID = 8.4A) * gFS 9.3 mhos Input Capacitance Ciss 2038 pF Output Capacitance Coss 307 pF Reverse Transfer Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Crss 10 pF Turn-On Delay Time td(on) 15 ns Rise Time tr 36 ns Turn-Off Delay Time td(off) 35 ns Fall Time (VDD = 250 V, ID = 7 A, RD = 17Ω, RG = 6.2Ω) * tf 29 ns Total Gate Charge Qg 64 nC Gate-Source Charge Qgs 16 nC Gate-Drain Charge (VDS = 400 V, ID = 7 A, VGS = 10 V)* Qgd 26 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 5.0 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 13 nH SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) VSD 1.5 V Forward Turn-On Time ton ** ns Reverse Recovery Time (IS =7 A, VGS = 0 V, dIS/dt = 100A/μs) trr 487 731 ns * Pulse Test: Pulse Width ≦300μs, Duty Cycle ≦2% ** Negligible, Dominated by circuit inductance |
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